Element Edge Based Discretization for TCAD Device Simulation

Tcad Simulation Framework for the Study of Tsv-device Interaction

Future Aspects of Process and Device Simulation 1 TCAD

Process and device simulation is commonly used for the design of new VLSI devices and processes and as an explorative tool to gain a better understanding of device and process physics. On the other hand, simulation is also carried out after the design phase to optimize certain parameters of a technology, e.g., to improve device reliability or to increase the yield. For these tasks the term "Tec...

TCAD oriented simulation of single-electron transistors at device level

In this paper we present a simulation approach for electron transport in singleelectron devices based on a weak-coupling formulation for the linear-response transconductance of a quantum dot/reservoir system. A simulation tool devised for the simulation of single-electron transistors has been developed. It provides the equilibrium solution of the nonlinear Poisson equation for the classical cha...

Mixed Finite Element Discretization of Continuity Equations Arising in Semiconductor Device Simulation

Automatic Device Design Optimization with TCAD Frameworks

A design optimization method is presented which utilizes automatic optimization capabilities within TCAD frameworks. This method is applied to doping profile optimizations of ultra-low-power CMOS transistors with 0.25 and 0.1 μm gate lengths. Two different performance goals are utilized, to maximize the drive current of an NMOS transistor and to minimize the gate delay time of a CMOS inverter s...